发明名称 |
Metal etching method for an interconnect structure and metal interconnect structure obtained by such method |
摘要 |
A metal interconnects structure, comprises a substrate ( 11 ), a dielectric layer ( 12 ) lying above the substrate, a stop layer ( 13 ) for metal etching lying above the dielectric layer, a metal layer ( 15 ') lying above the stop layer, said metal layer being patterned according to a desired pattern.
|
申请公布号 |
US2006148251(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20050544607 |
申请日期 |
2005.08.04 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
BROEKAART MARCEL E.;FORTUIN ARNOUD W. |
分类号 |
H01L21/44;H01L21/311;H01L21/3213;H01L21/4763;H01L21/768;H01L23/532 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|