发明名称 Metal etching method for an interconnect structure and metal interconnect structure obtained by such method
摘要 A metal interconnects structure, comprises a substrate ( 11 ), a dielectric layer ( 12 ) lying above the substrate, a stop layer ( 13 ) for metal etching lying above the dielectric layer, a metal layer ( 15 ') lying above the stop layer, said metal layer being patterned according to a desired pattern.
申请公布号 US2006148251(A1) 申请公布日期 2006.07.06
申请号 US20050544607 申请日期 2005.08.04
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 BROEKAART MARCEL E.;FORTUIN ARNOUD W.
分类号 H01L21/44;H01L21/311;H01L21/3213;H01L21/4763;H01L21/768;H01L23/532 主分类号 H01L21/44
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