发明名称 |
Forming shallow trench isolation without the use of CMP |
摘要 |
Shallow trench isolation structures are formed without CMP by depositing a thick pad nitride and depositing oxide trench fill material such that: a) the material in the trenches is above the silicon surface by a process margin that allows for removal of trench fill in subsequent front end steps so that the final trench fill level is substantially coplanar with the silicon; and b) the oxide on the interior walls is easily removed, so that the pad nitride is removed in a wet etch.
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申请公布号 |
US7071072(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20040710001 |
申请日期 |
2004.06.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MO RENEE T.;NARASIMHA SHREESH |
分类号 |
H01L21/76;H01L21/331;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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