Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a buried insulating layer

摘要

By using an implantation technique for forming a buried insulation layer, an SOI-type configuration may be achieved for hybrid orientation substrates, thereby significantly enhancing the further fabrication processes in forming circuit elements on differently oriented semiconductor regions. Consequently, process complexity for methodology and production steps is significantly reduced compared to fabrication processes based on conventional hybrid orientation substrates.