发明名称 Semiconductor device having sense amplifier driver with capacitor affected by off current
摘要 A semiconductor device having a sense amplifier driver with a capacitor affected by off current is provided. The sense amplifier driver, which receives a clock signal and generates a sense amplifier enable signal by buffering the clock signal, includes a plurality of inverters connected in series and at least one capacitor. A PMOS transistor of at least a first inverter of the plurality of inverters is connected between a dummy bit line, in which voltage drop by the off current is generated, and the output terminal of the first inverter and the at least one capacitor is connected between the dummy bit line and the output terminal of a second inverter which inverts an output signal of the first inverter. Therefore, the capacitance of the at least one capacitor is determined by voltage of the dummy bit line. Therefore, since the voltage drop of the dummy bit line is larger when the magnitude of the off current is larger, the capacitance of the at least one capacitor is larger. Therefore, active timing of the sense amplifier enable signal is determined according to the capacitance of the capacitor.
申请公布号 US7057420(B2) 申请公布日期 2006.06.06
申请号 US20040873943 申请日期 2004.06.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG TAE-JOONG;KIM TAE-HYOUNG
分类号 G11C7/00;G11C11/419;G11C7/06;G11C7/14;G11C11/409 主分类号 G11C7/00
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