发明名称 MULTI-LAYER WIRING, METHOD OF MANUFACTURING THE MULTI-LAYER WIRING, AND THIN FILM TRANSISTOR HAVING THE MULTI-LAYER WIRING
摘要 <p>A multi-layer wiring for use with thin film transistors (TFTs), methods of manufacturing the multi-layer wiring, and TFTs employing the multi-layer wiring are provided. In one embodiment, the multi-layer wiring includes a main wiring and a sub-wiring on the main wiring. The main wiring includes a first metal and the sub-wiring includes an alloy wherein a majority of the alloy is the first metal. The multi-layer wiring can exhibit decreased electrical resistance and a reduced tendency to develop malfunctions such as hillocks or spiking. The multi-layer wiring can also exhibit improved contact characteristics with other conductive elements of TFT display devices.</p>
申请公布号 KR20060059565(A) 申请公布日期 2006.06.02
申请号 KR20040098689 申请日期 2004.11.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JE HUN;CHO, BEOM SEOK;JEONG, CHANG OH;BAE, YANG HO
分类号 H01L21/28;H01L29/786 主分类号 H01L21/28
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