发明名称 |
MULTI-LAYER WIRING, METHOD OF MANUFACTURING THE MULTI-LAYER WIRING, AND THIN FILM TRANSISTOR HAVING THE MULTI-LAYER WIRING |
摘要 |
<p>A multi-layer wiring for use with thin film transistors (TFTs), methods of manufacturing the multi-layer wiring, and TFTs employing the multi-layer wiring are provided. In one embodiment, the multi-layer wiring includes a main wiring and a sub-wiring on the main wiring. The main wiring includes a first metal and the sub-wiring includes an alloy wherein a majority of the alloy is the first metal. The multi-layer wiring can exhibit decreased electrical resistance and a reduced tendency to develop malfunctions such as hillocks or spiking. The multi-layer wiring can also exhibit improved contact characteristics with other conductive elements of TFT display devices.</p> |
申请公布号 |
KR20060059565(A) |
申请公布日期 |
2006.06.02 |
申请号 |
KR20040098689 |
申请日期 |
2004.11.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JE HUN;CHO, BEOM SEOK;JEONG, CHANG OH;BAE, YANG HO |
分类号 |
H01L21/28;H01L29/786 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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