CMOS IMAGE SENSOR HAVING BURIED CHANNEL MOS TRANSISTORS,申请号KR20040097671-传众专利搜索

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发明名称	CMOS IMAGE SENSOR HAVING BURIED CHANNEL MOS TRANSISTORS
摘要
申请公布号	KR20060058584(A)	申请公布日期	2006.05.30
申请号	KR20040097671	申请日期	2004.11.25
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	AHN, JUNG CHAK;ASABA TETSUO;KIM, YI TAE;KIM, JUNG YEON;HWANG, SUNG IN
分类号	H01L27/146;H01L21/336;H01L31/10;H04N5/351;H04N5/357;H04N5/369;H04N5/374	主分类号	H01L27/146
代理机构		代理人
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