| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which leakage of high-frequency noise due to high-frequency current components to the outside of a semiconductor chip can be reduced, without attaching a noise removal component to the primary power supply side, even when a circuit functioning through switching operation, e.g. a switching power supply, is formed on the semiconductor chip. <P>SOLUTION: A plurality of electrode pads are arranged on a semiconductor chip, wires connecting respective electrode pads and corresponding internal terminals are combined in the direction of current flow, and wire bonding is performed, such that the wires are substantially parallel and have the substantially same length in each set of wires. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
