| 摘要 |
A substrate processing system, which includes a vacuum deposition process chamber having an exhaust outlet configured to discharge one or more particles during a deposition cycle and cleaning gas reactants during a cleaning cycle and an in-situ particle monitor coupled to the exhaust outlet. The in-situ particle monitor is configured to determine a starting point of the cleaning cycle. The plasma enhanced chemical vapor deposition system further includes an infrared endpoint detector assembly coupled to the exhaust outlet. The infrared endpoint detector assembly is configured to determine an endpoint of the cleaning cycle.
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