| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC single crystal which can provide an SiC single crystal that exhibits high resistivity and an SiC substrate, and can stably manufacture an SiC single crystal that exhibits high resistivity. <P>SOLUTION: The SiC single crystal is an SiC single crystal which comprises a first dopant that has a function as an acceptor and a second dopant that has a function as a donor, wherein the content of the first dopant is 5×10<SP>15</SP>/cm<SP>3</SP>or more, and the content of the second dopant is 5×10<SP>15</SP>/cm<SP>3</SP>or more, and further the content of the first dopant is more than the content of the second dopant. The method of manufacturing a silicon carbide single crystal comprises a step for producing a raw material by mixing a metal boride into a material containing carbon and silicon, a step for vaporizing the raw material, a step for forming a mixed gas containing carbon, silicon, boron and nitrogen, and a step for growing a silicon carbide single crystal that contains boron and nitrogen on the surface of a seed crystal substrate by a recrystallization of the mixed gas on the surface of the seed crystal substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
