| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing GaN system compound semiconductor capable of growing AlGaN layer high in AlN composition ratio in a short time when forming a nitride semiconductor substrate layer by applying hetero ELO (epitaxial lateral overgrowth) technology. <P>SOLUTION: In a process of forming a substrate semiconductor layer 10 for reducing a threading dislocation density of a GaN system compound semiconductor on a substrate 1; a seed crystal layer 13 mainly composed of GaN or AlGaN and constituting one portion of the substrate semiconductor layer portion 10 is formed in a chevron shape having a slant surface along edge portion, so that a film thickness may become thicker as it separates further from an edge portion of pattern viewed from above of the seed crystal layer 10 in a direction parallel to a substrate front surface. Furthermore, an upper substrate semiconductor layer 15 mainly composed of AlGaN and constituting one portion of the substrate semiconductor layer 10 is formed directly on the upper side of the seed crystal layer 13, or on an interlayer 14 formed along a front surface of the seed crystal layer 13 by supplying an element selected from alkaline earth metal or alkali metal so that its front surface may become flat. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
