| 摘要 |
1,220,023. Integrated circuits. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 21 March, 1969 [26 March, 1968], No. 15061/69. Heading H1K. In an integrated circuit (such as the logic unit of Fig. 1, not shown), a transistor and an associated base leak resistor are formed in one pocket of a junction isolated unit. The silicon device shown is formed by epitaxially depositing an N-type layer on a P-type substrate, by forming P<SP>+</SP> isolation walls 4 using diffusion through an oxide mask, and by forming a diffused transistor. The emitter region 6 is in the form of a rectangular frame and is contacted by a U- shaped contact 9. Connection to the base region 5 is established by a central contact 8 within the emitter frame. Around three sides of the isolated pocket the base region is made to extend far enough to merge with the isolation walls. The base leak resistor is constituted by the resistance in the base layer between the base contact 8 and a contact (not shown) to the isolation wall. In a variant, the collector region has the form of a circular disc and the base region is then a half disc of slightly greater diameter.
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