发明名称 |
Solid-state imaging device |
摘要 |
The present invention provides a solid-state imaging device having an array of unit pixels, each unit pixel including a photoelectric conversion element and an amplifier transistor for amplifying a signal corresponding to charge obtained by photoelectric conversion through the photoelectric conversion element and outputting the resultant signal. The amplifier transistor includes a buried channel MOS transistor. According to the present invention, 1/f noise can be basically reduced.
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申请公布号 |
US2006081957(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050252909 |
申请日期 |
2005.10.18 |
申请人 |
ITONAGA KAZUICHIRO;ENDO SUZUNORI;YOSHIHARA IKUO |
发明人 |
ITONAGA KAZUICHIRO;ENDO SUZUNORI;YOSHIHARA IKUO |
分类号 |
H01L31/00;H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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