| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor integrated circuit device which can avoid a problem with an increased chip surface area while avoiding unstable operation of transistors caused by characteristic variations or the like between the transistors, and further avoiding element destruction caused by thermal runaway due to the character variations. SOLUTION: A base ballast resistance 12 is formed by making a thin film of a predetermined metal and causing the film to function as a sheet resistance. A capacitor 13 is formed by commonly using the base ballast resistor 12 as a lower electrode, and sequentially laminating a dielectric material 13b and an upper electrode 13a in this order on the base ballast resistor 12. One end of the base ballast resistor 12 is electrically connected with the upper electrode 13a at a connection point 14. A high frequency signal is input to the connection point 14 through a wiring line 16 connected to the upper electrode 13a. The other end of the base ballast resistor 12 is connected to the base of a transistor 11 via a connection point 15 and a wiring line 17. COPYRIGHT: (C)2006,JPO&NCIPI
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