| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing the capacitor of a semiconductor element wherein degree of crystallinity and diameter of crystal grain of a ferroelectric film are made uniform, and data storage ability of the ferroelectric film is increased, in the manufacturing process of a capacitor in the structure of a metal film as a lower electrode, a ferroelectric film, and a metal film as an upper electrode. SOLUTION: The method for manufacturing the capacitor of the semiconductor element is provided with a stage which forms the first metal film of noble system as the lower electrode, a stage which forms the ferroelectric film on the first metal film, a stage which performs a first annealing process on an resultant object in which the ferroelectric film is formed, a stage which performs an ion implantation process on the whole surface of the resultant object to which the first annealing process was finished, a stage which performs a second annealing process on the whole surface of the resultant object to which the ion implantation process was finished, a stage which forms the second metal layer of noble system as the upper electrode on the ferroelectric film of the resultant object to which the second annealing process was finished, and a stage which performs a third annealing process on the whole surface of the resultant object. COPYRIGHT: (C)2006,JPO&NCIPI
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