| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature raising unit which can raise rapidly a temperature of a wafer to be treated, can form a film by introducing gas from above a unit body, or where the wafer to be treated is hardly contaminated by a particle etc. SOLUTION: The temperature raising unit includes a unit body 1A, a heater 3 which is located at the upper position in the unit body and heats the wafer W to be treated, a lift pin 8 which removes the wafer to be treated, a gas introducing inlet 5 to introduce gas into the unit body, and an exhaust outlet 6 to exhaust the gas introduced into the unit body. The heater 3 includes a carbon wire heater 3c buried in a quartz glass substrate and a plurality of through holes 3b to make the gas introduced from the gas introducing inlet pass therethough. COPYRIGHT: (C)2006,JPO&NCIPI |
