| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that, in a transparent conductive substrate with an indium oxide film formed by a sputtering method with a glass substrate in unheated state, with the use of indium oxide as a target, a specific resistance greatly changes if the transparent conductive substrate is put under heating treatment at various temperatures. SOLUTION: On the manufacturing method of the indium oxide film, when the indium oxide conductive film is formed into a film on a non-heated glass substrate by the sputtering method with the use of an indium oxide target, an indium oxide film is formed in an argon gas atmosphere with a volume of oxygen gas of 2.5 volume% or less, and, after the film-forming of the indium oxide, the glass substrate with the indium oxide film-formed is put under heat treatment at a temperature of 100 to 200°C with a sheet resistance of the indium oxide set at 50 to 150Ω/sq. COPYRIGHT: (C)2006,JPO&NCIPI
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