| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device by forming a transistor excellent in high frequency characteristics in which the width of an emitter electrode (an emitter layer) is miniaturized since the miniaturization of the width of the emitter electrode is indispensable for realizing the high performance of the transistor. SOLUTION: An active region 2a surrounded by an element isolation film 3 is provided on a silicon substrate 1. An SiGe alloy layer 4 functioning as a base layer and an n-type diffusion layer 5 functioning as the emitter layer are provided on the active region 2a. The SiGe alloy layer 4 and the n-type diffusion layer 5 are surrounded by a side wall film 6 composed of a silicon oxide film. A polycrystalline silicon film 7 and a silicide film 8 on the n-type diffusion layer 5 are provided in a state of straddling the n-type diffusion layer 5, the side wall film 6, and the element isolation film 3. The side wall film 6 located under the polycrystalline silicon film 7 is provided in a state of straddling the boundary 50 of the active region 2a and the element isolation film 3. An extraction electrode 21 connected to the emitter layer (the n-type diffusion layer 5) is formed so as to be connected to the silicide film 8 on the element isolation film 3 after planarization of the surface by providing an interlayer dielectric film 10. COPYRIGHT: (C)2006,JPO&NCIPI
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