| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning liquid capable of removing an etching residue remaining after dry etching, in a short time, in a wiring process of a semiconductor element used for a semiconductor integrated circuit, without causing oxidation nor corrosion of a copper wiring material, an insulating film material, etc., and to provide a cleaning method using the same. SOLUTION: This cleaning liquid comprises an aqueous solution which is formed by together mixing nitric acid, sulfuric acid, a fluorine compound, and a basic compound, wherein a water concentration of the liquid is not less than 80 wt% and a pH thereof is controlled to be not less than 1 and less than 3. COPYRIGHT: (C)2006,JPO&NCIPI
|
