| 摘要 |
<p>The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V, a temperature gradient of the crystal at a central portion of the crystal is defined as Gc, and a temperature gradient of the crystal at a peripheral portion of the crystal is defined as Ge, the temperature gradient Gc at the central portion of the crystal and the temperature gradient Ge at the peripheral portion of the crystal are controlled by changing a distance between the melt surface of the raw material melt and a heat insulating member provided so as to oppose to the surface of the raw material melt, thereby difference ”G between the temperature gradient Gc at the central portion of the crystal and the temperature gradient Ge at the peripheral portion of the crystal is 0.5 °C/mm or less, and also V/Gc which is a ratio of the pulling rate V and the temperature gradient Gc at the central portion of the crystal is controlled so that a single crystal including a desired defect region can be grown. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering the pulling rate V, and thus the single crystal including a desired defect region over a whole plane in the radial direction entirely in the direction of the crystal growth axis can be produced effectively for a short time and at high yield.</p> |
