A method for forming a trench of a semiconductor device, and a method for forming a mask pattern thereof,申请号KR20030098326-传众专利搜索

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发明名称	A method for forming a trench of a semiconductor device, and a method for forming a mask pattern thereof
摘要
申请公布号	KR100562299(B1)	申请公布日期	2006.03.22
申请号	KR20030098326	申请日期	2003.12.27
申请人		发明人
分类号	H01L21/027	主分类号	H01L21/027
代理机构		代理人
主权项
地址

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