| 摘要 |
In a method of manufacturing a high-voltage semiconductor device, a mask layer is formed on a semiconductor substrate. The mask layer is patterned to form a stepped portion of the mask layer. A photoresist pattern for defining an active region of the substrate is formed on the substrate using the stepped portion as an alignment mark. The alignment mark for aligning the photoresist pattern that is used for the active region of the high-voltage semiconductor device may be formed by reduced processing steps with reduced incidence of contamination, thereby improving device performance with higher productivity and reduced production costs.
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