| 发明名称 |
SWITCH CAPACITOR CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF |
| 摘要 |
<p>A rectangular parallelepiped projecting portion (21) having a height of H B and a width of W B is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the projecting portion (21), thereby generating a MOS transistor. By connecting in parallel a p-channel MOS transistor and an n-channel MOS transistor produced as described above, a switch of a switched capacitor circuit is configured, thereby reducing a leak current and a DC offset of the switched capacitor circuit.</p> |
| 申请公布号 |
EP1635393(A1) |
申请公布日期 |
2006.03.15 |
| 申请号 |
EP20040745814 |
申请日期 |
2004.06.11 |
| 申请人 |
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI;NIIGATA SEIMITSU CO., LTD.;OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO,;NISHIMUTA, TAKEFUMI;MIYAGI, HIROSHI;SUGAWA, SHIGETOSHI;TERAMOTO, AKINOBU |
| 分类号 |
H01L21/336;H01L21/8238;H01L27/092;H03H19/00;(IPC1-7):H01L27/092;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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| 主权项 |
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