DRY ETCHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a dry etching method for working the corner of a hard mask into a round shape. SOLUTION: The mask 12 of a silicon nitride film 12 is formed by a patterned photoresist 13. The photoresist 13 is reduced by dry etching. The corner of the exposed silicon nitride film mask 12 is etched. Thus, a recessing processing can be performed on a semiconductor device having the round shape in the corner of the silicon nitride film mask 12. COPYRIGHT: (C)2006,JPO&NCIPI