发明名称 Sensor with in-stack bias structure providing exchange stabilization
摘要 A magnetic head having an in-stack bias structure and a free layer structure. The in-stack bias structure includes an antiferromagnetic layer; a first bias layer positioned towards the antiferromagnetic layer, a magnetic moment of the first bias layer being pinned by the antiferromagnetic layer; a first antiparallel coupling layer positioned adjacent the first bias layer; and a second bias layer positioned between the first and second antiparallel coupling layers and having a magnetic moment pinned antiparallel to the magnetic moment of the first bias layer. A second antiparallel coupling layer is positioned adjacent the second bias layer of the bias structure. The free layer structure, positioned adjacent the antiparallel coupling layer, includes a first free layer having a magnetic moment and a second free layer having a magnetic moment pinned antiparallel to the magnetic moment of the first free layer. The second bias layer is antiparallel coupled to the first free layer of the free layer structure for stabilizing the free layer structure.
申请公布号 US2006044706(A1) 申请公布日期 2006.03.02
申请号 US20040930362 申请日期 2004.08.30
申请人 HITACHI GLOBAL STORAGE TECNHNOLOGIES 发明人 GILL HARDAYAL S.
分类号 G11B5/127;G11B5/33 主分类号 G11B5/127
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