HIGH TRANSCONDUCTANCE AND DRIVE CURRENT HIGH VOLTAGE MOS TRANSISTORS

摘要

A composite MOS transistor (100) includes a first MOS sub-transistor (105) having a first gate dielectric thickness (106), and a second MOS sub-transistor (155) in series connection with the first MOS sub-transistor having a second gate dielectric thickness (107). The second gate dielectric thickness (107) is substantially thicker than the first gate dielectric thickness (106) preferably being at least 50% thicker. Composite MOS transistors generally provide a breakdown voltage (V<sub