发明名称 CAPACITOR HAVING DIELECTRIC LAYER WITH REDUCED LEAKAGE CURRENT AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a capacitor having a dielectric layer where leakage current is reduced, and to provide its manufacturing method. <P>SOLUTION: In the capacitor comprising a silicon substrate, a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, the dielectric layer is formed of a substance, containing a composite oxide of a transition metal and a lanthanum-based substance. As a result, the leakage current of a capacitor containing transition metal oxide can be reduced sharply. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006060234(A) 申请公布日期 2006.03.02
申请号 JP20050240043 申请日期 2005.08.22
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 RI SHOKEN;PARK SUNG-HO;JO HANSHAKU
分类号 H01L27/108;H01L21/822;H01L21/8242;H01L27/04 主分类号 H01L27/108
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