| 摘要 |
A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrO<SUB>x </SUB>film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrO<SUB>x </SUB>film containing columnar crystals is formed.
|
