发明名称 SYSTEM, METHOD AND APPARATUS FOR IMPROVED LOCAL DUAL-DAMASCENE PLANARIZATION
摘要 A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate (100). The patterned semiconductor substrate includes a conductive interconnect material (120) filling multiple of features (102, 104,106) in the pattern. The conductive interconnect material having an overburden portion (112). The overburden portion (112) includes a localized non-uniformity (indicated in variations 114, 116, 118). An additional layer (202) is formed an the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.
申请公布号 WO2004084267(A3) 申请公布日期 2006.02.23
申请号 WO2004US07530 申请日期 2004.03.10
申请人 LAM RESEARCH CORPORATION;LOHOKARE, SHRIKANT, P.;BAILEY, ANDREW, D., III;HEMKER, DAVID;COOK, JOEL, M. 发明人 LOHOKARE, SHRIKANT, P.;BAILEY, ANDREW, D., III;HEMKER, DAVID;COOK, JOEL, M.
分类号 H01L21/3105;H01L21/321;H01L21/3213;H01L21/768 主分类号 H01L21/3105
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