Non-volatile semiconductor memory device with memory transistor

摘要

In the present flash memory a threshold voltage of a memory transistor to which data is written is detected and the detected value is used to set an initial value of a pulse voltage of a write pulse signal, and whenever the write pulse signal is applied, the pulse voltage is increased by a step voltage. The memory transistor's drain current and the threshold voltage's variation can be smaller than when a fixed pulse voltage is applied, as conventional.