| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of improving a reading performance for the storage information. <P>SOLUTION: A plurality of circuits wherein memory transistors 21 and control transistors 22 are recursively made in series, are provided in parallel, and an inversion layer is formed in the direction intersected with the above serial direction by that the control transistors are turned ON, and by turning ON the control transistors 22 in the reading operation, a current flowing into the memory transistors can be pulled in to the inversion layer of the control transistors. A characteristic adjustment circuit is prepared for giving a positive temperature characteristic to a signal voltage to be supplied to gate electrodes of the control transistors 22. The inversion layer is formed on a surface of a semiconductor substrate and provided with a negative temperature characteristic. For offsetting the negative temperature characteristic of the inversion layer, a voltage having the positive temperature characteristic is given to the gate electrodes of the control transistors which form the inversion layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
