NONVOLATILE MEMORY DEVICE WITH A FLOATING GATE COMPRISING SEMICONDUCTOR NANOCRYSTALS

摘要

A floating gate (156) for a field effect transistor (150) (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles (156) in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.