| 摘要 |
<p>A transparent conductive film of low resistivity excelling in transparency and etching properties; a sputtering target as its raw material; an amorphous transparent electrode substrate having the transparent conductive film superimposed on a substrate; and a process for producing the same. In particular, an amorphous transparent conductive film comprising at least indium oxide and zinc oxide, which contains at least one third metal selected from among Re, Nb, W, Mo and Zr and satisfies the formulae: 0.75 ‰¦ [In]/([In]+[Zn]) ‰¦ 0.95 (1) 1.0x10 -4 ‰¦ [M]/([In]+[Zn]+[M] ‰¦ 1.0x10 -2 (2) wherein [In], [Zn] and [M] represent the atomicity of In, atomicity of Zn and atomicity of third metal, respectively. This amorphous transparent conductive film exhibits amorphism ensuring excellent etching processability and exhibits low specific resistance and high mobility.</p> |
