| 摘要 |
PROBLEM TO BE SOLVED: To prevent the scattering of a thin film integrated circuit concerning a manufacturing method of the thin film integrated circuit. SOLUTION: In a manufacturing method of thin film integrated circuits according to the present invention, a stripping layer is selectively formed on one surface of a substrate. Then, there are formed a first region provided with the stripping layer and a second region not provided with the stripping region. Next, a thin film integrated circuit is formed at the upper part of the stripping layer. Continuously, an opening part exposing the stripping layer is formed, and an etching agent is introduced into the opening part to remove the stripping layer. Then, a space is generated in the region provided with the stripping layer, but a space is not generated in the region not provided with the stripping layer. Thus, there is provided the region producing no space after the removal of the stripping layer, and thereby, the scattering of the thin film integrated circuit after the removal of the stripping layer is prevented. COPYRIGHT: (C)2006,JPO&NCIPI
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