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发明名称
forming method of MOS Transistor
摘要
申请公布号
KR100549578(B1)
申请公布日期
2006.02.08
申请号
KR20040037552
申请日期
2004.05.25
申请人
发明人
分类号
H01L21/336;H01L21/8242;H01L29/10;H01L29/78;H01L29/788
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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