发明名称 |
Structure for monitoring semiconductor polysilicon gate profile |
摘要 |
Detection of a profile drift of a polysilicon line is enhanced by a test structure that (1) measures a bottom width and an average width of a cross sectional area of the same polysilicon line (2) correlates the two measurements, and (3) compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line.
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申请公布号 |
US2006024853(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20040901870 |
申请日期 |
2004.07.29 |
申请人 |
INTERNATIONAL BUSINES MACHINES CORPORATION |
发明人 |
AHSAN ISHTIAQ;MACIEJEWSKI EDWARD P. |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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