发明名称 |
Methods for transferring a thin layer from a wafer having a buffer layer |
摘要 |
A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer layer. The strained layer is made of a semiconductor material having a nominal lattice parameter that is substantially different from the first lattice parameter, and it is grown to a thickness that is sufficiently thin to avoid relaxation of the strain therein. The method also includes growing a relaxed layer on the strained layer. The relaxed layer is made of silicon and has a concentration of at least one other semiconductor material that has a nominal lattice parameter that is substantially identical to the first lattice parameter. The technique also includes providing a weakened zone in the buffer layer, and supplying energy to detach a structure at the weakened zone. The structure includes a portion of the buffer layer, the strained layer and the relaxed layer. Lastly; the method includes enriching the concentration of the at least one other semiconductor material in the relaxed layer of the structure.
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申请公布号 |
US6991956(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20050032844 |
申请日期 |
2005.01.10 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
GHYSELEN BRUNO;AULNETTE CECILE;OSTERNAUD BENEDITE;DAVAL NICOLAS |
分类号 |
H01L21/00;H01L21/02;H01L21/20;H01L21/30;H01L21/762;H01L27/12 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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