发明名称 |
Mask ROM, and fabrication method thereof |
摘要 |
The present invention discloses a mask ROM which has excellent compatibility with a logic process and improves integration of a memory cell, and a fabrication method thereof. The mask ROM includes: a substrate where a memory cell array region and a segment select region are defined; first and second trenches respectively formed at the outer portion of the memory cell array region and at the outer portion of a buried layer formation region of the segment select region; an element isolating film and an isolating pattern respectively filling up the first and second trenches; a plurality of buried layers aligned on the substrate in a first direction by a predetermined interval, and surrounded by the isolating pattern; and a plurality of gates aligned in a second direction to cross the buried layers in an orthogonal direction.
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申请公布号 |
US6989307(B2) |
申请公布日期 |
2006.01.24 |
申请号 |
US20040803422 |
申请日期 |
2004.03.18 |
申请人 |
DONGBUANAM SEMICONDUCTOR, INC. |
发明人 |
LIM MIN GYU |
分类号 |
H01L21/8234;H01L27/10;H01L21/8246;H01L27/105;H01L27/108;H01L27/112;H01L29/76;H01L29/94 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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