发明名称 METHODS FOR MANUFACTURING DIELECTRIC FILM, PIEZOELECTRIC ELEMENT, AND LIQUID INJECTION HEAD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a dielectric film capable of relatively easily controlling a crystal condition to obtain a stable property on a constant basis, to provide a method for manufacturing a piezoelectric element having a dielectric-film piezoelectric layer, and to provide a method for manufacturing a liquid injection head provided with the piezoelectric element. <P>SOLUTION: The method for manufacturing the dielectric film comprises the steps of applying an solution with an organic metallic compound dissolved to form a dielectric film precursor film, drying the dielectric precursor film, degreasing the dielectric precursor film, and calcining the dielectric precursor film. In the step of calcining, a temperature rising rate is not more than 15(°C/sec) when the temperature of the dielectric precursor film rises from 400°C to 700°C. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006019592(A) 申请公布日期 2006.01.19
申请号 JP20040197306 申请日期 2004.07.02
申请人 SEIKO EPSON CORP 发明人 KAZAMA HIRONOBU;MURAI MASAMI;ITO MAKI
分类号 H01L41/09;B41J2/14;B41J2/145;B41J2/16;H01L41/18;H01L41/187;H01L41/22;H01L41/318;H01L41/43 主分类号 H01L41/09
代理机构 代理人
主权项
地址
您可能感兴趣的专利