| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the size and cost, and to provide its manufacturing method. <P>SOLUTION: In the semiconductor device 10 where P type diffusion layers 22 and 22 are provided at a part on the lower surface of an N type epitaxial layer 14 formed on the lower surface of an N type semiconductor substrate 12 and having a resistance higher than that of the N type semiconductor substrate 12, and a first electrode layer 20 is provided on the lower surface of the P type diffusion layers 22, 22 and the N type epitaxial layer 14 on the periphery thereof, a second electrode layer 21 connected with the N type semiconductor substrate 12 is provided on the bottom of a recess in the lower surface of the N type epitaxial layer 14 where the first electrode layer 20 is not formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
