| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure method capable of performing projection exposure with fidelity and high accuracy by satisfactorily suppressing variations of the line width of a pattern formed on a photosensitive substrate, for example, even if aberration of a projection optical system using an EUV light is not sufficiently suppressed. <P>SOLUTION: In the exposure method, the pattern of a mask (M) disposed on the object surface of a projection optical system (PL) is exposed on the photosensitive substrate (W) disposed on the image surface of the projection optical system to form the pattern of a desired line width on the photosensitive substrate. A mask is disposed on which a pattern having a line width substantially smaller than a converted value on the object surface of a desired line width. The pattern of the mask is projected on the photosensitive substrate with an exposure light quantity substantially different from a standard exposure light quantity required for forming a pattern of desired line width on the photosensitive substrate using a standard mask having a pattern of line width same as the converted value. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
