| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, which can obtain a uniform value by improving an element characteristic of the thin film transistor in such a way that capping layer is crystallized by patterning so that seed or crystal grain boundary might not be formed in junction region, and its manufacturing method. SOLUTION: The method comprises the stages of: forming amorphous silicon layer on a substrate; forming a semiconductor layer pattern by patterning and crystallizing the amorphous silicon layer; forming gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film. Although the seed or the crystal grain border exists inside the semiconductor layer pattern, they do not exist in the junction region. COPYRIGHT: (C)2006,JPO&NCIPI
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