| 摘要 |
<P>PROBLEM TO BE SOLVED: To control deviation of crystal orientation that occurs in manufacture of a semiconductor thin film and a semiconductor element. <P>SOLUTION: The process for producing a semiconductor thin film comprises a step of forming an underlying semiconductor layer 2, arranged with a plurality of facets 1 on a substrate by selective growth, and a step of growing a selective growth buried semiconductor layer, covering the underlying semiconductor layer 2, wherein the facets 1 are formed on a surface inclining against the arranging surface of the underlying semiconductor layer 2, thus making a low defect density region 5 generated for constituting a semiconductor element. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
