发明名称 POLYMER COMPOUND, RESIST MATERIAL AND PATTERN-FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a polymer compound which is used as a base resin for resist materials, particularly chemical amplification type positive resist materials, gives high sensitivity, resolution, and resistance to dry etching, excels in the adhesion to a substrate, and can give such a resist pattern as to prevent the pattern side walls from roughening. <P>SOLUTION: The polymer compound comprises at least one of the respective repeating units to be represented by formulae (1) and (2) [wherein R<SP>1</SP>and R<SP>3</SP>are each H or CH<SB>3</SB>; R<SP>4</SP>is an alkylene group; R<SP>2</SP>is a substituent having a lactone structure selected from formulae (R<SP>2</SP>-1) to (R<SP>2</SP>-4) (wherein Y is CH<SB>2</SB>or O and when Y is CH<SB>2</SB>, R<SP>5</SP>is CO<SB>2</SB>R<SP>7</SP>, and when Y is O, R<SP>5</SP>is H or CO<SB>2</SB>R<SP>7</SP>; R<SP>6</SP>is H or an alkyl group; and R<SP>7</SP>is an alkyl group or a group in which oxygen is inserted between the carbon-carbon bond of the alkyl group)] and has a weight average molecular weight of 1,000-50,000. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006002118(A) 申请公布日期 2006.01.05
申请号 JP20040182686 申请日期 2004.06.21
申请人 SHIN ETSU CHEM CO LTD 发明人 FUNATSU AKIYUKI;HASEGAWA KOJI;NISHI TSUNEHIRO
分类号 C08F220/28;C08F220/04;C08F220/26;G03C1/492;G03F7/039;H01L21/027 主分类号 C08F220/28
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