发明名称 |
Dynamic p-n junction growth |
摘要 |
Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.
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申请公布号 |
US2005285119(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
US20050165847 |
申请日期 |
2005.06.17 |
申请人 |
BURGENER ROBERT H II;FELIX ROGER L;RENLUND GARY M |
发明人 |
BURGENER ROBERT H.II;FELIX ROGER L.;RENLUND GARY M. |
分类号 |
C01G9/02;H01L21/00;H01L21/28;H01L21/31;H01L21/3115;H01L21/316;H01L21/363;H01L21/365;H01L21/469;H01L23/58;H01L27/15;H01L29/225;H01L29/26;H01L31/0296;H01L31/0328;H01L31/12;H01L33/28;H01S5/30;H01S5/327;H01S5/347;(IPC1-7):H01L21/00;H01L33/00 |
主分类号 |
C01G9/02 |
代理机构 |
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代理人 |
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