| 发明名称 |
SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING METAL COMPOUND THIN FILM |
| 摘要 |
<p>A high dielectric gate insulating film (106) having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate (102) side. <IMAGE> <IMAGE></p> |
| 申请公布号 |
EP1610394(A1) |
申请公布日期 |
2005.12.28 |
| 申请号 |
EP20040722954 |
申请日期 |
2004.03.24 |
| 申请人 |
ROHM CO., LTD.;RENESAS TECHNOLOGY CORP.;HORIBA, LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
IWAMOTO, KUNIHIKO;NABATAME, TOSHIHIDE;TOMINAGA, KOJI;YASUDA, TETSUJI, |
| 分类号 |
H01L21/318;H01L29/78;H01L21/28;H01L21/336;H01L29/51;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/318 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
