METHOD FOR PROCESSING COPPER SURFACE, METHOD FOR FORMING COPPER PATTERN WIRING AND SEMICONDUCTOR DEVICE MANUFACTURED USING SUCH METHOD

摘要

A gas inlet is arranged in the lower portion of a reaction chamber, so is a copper substrate in the upper potion thereof, and so is a tungsten catalyst heated at 1600˚C between the gas inlet and the substrate. An ammonia gas introduced from the gas inlet is decomposed by the tungsten catalyst, and a chemical species produced through the decomposition is reacted with the copper substrate surface, thereby removing contaminants on the copper surface through reduction and forming a Cu3N thin film on the copper surface. This Cu3N thin film serves as an oxidation preventing film, and is removed through thermal decomposition when heated to a temperature not less than 300˚C, thereby leaving a clean copper surface behind.