发明名称 A silicon solar cells by using an hollow cathode plasma system for a p-n junction isolation and it's manufacturing method
摘要 PURPOSE: A silicon solar cell and a manufacturing method thereof are provided to improve reproductivity and productivity by separating simultaneously n type layers from p-n junctions of wafers using uniform plasma of high density. CONSTITUTION: A p type silicon substrate is regularly sawn and contaminants are removed therefrom. A texture for reducing surface-reflectivity is formed on the substrate by using etching. The substrate is cleaned by using deionized water and dried. A solar cell wafer is formed by forming an n type layer on the substrate. At this time, a PSG(Phosphorus Silicate Glass) layer is formed thereon. The PSG layer is removed therefrom and the n type layer is separated from a p-n junction of the substrate by using an electrode separating apparatus under a predetermined gas atmosphere. The predetermined gas is formed by mixing SF6 with O2.
申请公布号 KR100537757(B1) 申请公布日期 2005.12.20
申请号 KR20030032755 申请日期 2003.05.23
申请人 发明人
分类号 H01L31/04;H01L31/18 主分类号 H01L31/04
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