| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device where a bonding material in which lead having heat resistance and die bonding property of not more than 400°C is not used is used and lead having thermal fatigue reliability is not used. <P>SOLUTION: Alloy obtained by adding one or more kind of Ag and Cu by 5 to 30 wt% to Sn-Sb alloy whose composition ratio is 43 wt%≤Sb/(Sn+Sb) weight ratio <53 wt% is set to be solder materials 6, 7, 8 and 9. A semiconductor element 1, a base electrode 2 and a lead electrode 3 are bonded by inserting a low thermal expansion member 4 whose thermal expansion ratio is not more than 10 ppm among them. Bonding faces of respective members are Ni-metallized, and heat resistance and die bonding property are secured. Damage of the semiconductor element 1 is prevented and thermal fatigue life is improved. The semiconductor device A can be supplied where lead securing heat-resistant reliability of 250°C and thermal fatigue reliability of not less than 7,000 times is not used. The device can effectively be applied as a large capacity semiconductor device for vehicle use, in which lead is requested to be not used in a bonding material without reducing heat resistance and thermal fatigue life. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
