| 发明名称 |
Semiconductor substrate layer configured for inducement of compressive or expansive force |
| 摘要 |
An integrated circuit (IC) utilizes a strained layer. The substrate can utilize trenches in a base layer to induce stress in a layer. The trenches define pillars on a back side of a bulk substrate or base layer of a semiconductor-on-insulator (SOI) wafer.
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| 申请公布号 |
US2005263753(A1) |
申请公布日期 |
2005.12.01 |
| 申请号 |
US20050179282 |
申请日期 |
2005.07.12 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PELELLA MARIO M.;CHAN SIMON S. |
| 分类号 |
C30B25/18;H01L21/20;H01L21/304;H01L21/762;(IPC1-7):H01L29/06 |
主分类号 |
C30B25/18 |
| 代理机构 |
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