发明名称 |
Method and structure for improved trench processing |
摘要 |
A method is provided for making a trench capacitor by forming a trench in a substrate. The trench is then widened and a sacrificial collar is formed on sidewalls of the widened trench. The trench is then vertically deepened to extend below the sidewalls of the sacrificial collar. Subsequently, a capacitor is formed in the trench below the sacrificial collar. An integrated circuit includes a deep trench structure formed in a single-crystal region of a semiconductor substrate including an upper trench portion, the upper trench portion having an opening of rectangular shape. A lower trench portion is formed below the upper trench portion. The lower portion may be widened to have a bottle shape. Alternatively, the upper trench portion may be widened relative to the lower trench portion.
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申请公布号 |
US6967136(B2) |
申请公布日期 |
2005.11.22 |
申请号 |
US20030604594 |
申请日期 |
2003.08.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AKATSU HIROYUKI;CHENG KANGGUO;SETTLEMYER KENNETH |
分类号 |
H01L21/20;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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